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| Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 12 mW (typ.) Light emitting spectrum suited for silicon photodetectors : P = 900 nm (typ.) Good optical power output linearity with respect to input current Long lifetime, high reliability 1. 0 0. 15 2.40.3 12.7 min. 1.20.1 0.250.1 o4.2 +0.2 -0.1 2-o0.450.05 Wide directivity : = 100 deg. (typ.) 15 0. 0 1. 45 3 o5.35 +0.2 -0.1 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 2 1 Symbol PD IF IFP * Ratings 170 100 2 3 -25 to +85 -30 to +100 Unit mW mA A V C C 2.540.25 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Response time Half-power angle Symbol PO P VF IR Ct tr , t f Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IF = 100mA The angle in which radiant intencity is 50% min 7 typ 12 900 70 1.4 50 700 100 max Unit mW nm nm 1.7 10 V A pF ns deg. 1 Infrared Light Emitting Diodes LN172 IF -- Ta 120 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 10 IFP -- VF tw = 10s f = 100Hz Ta = 25C IF (mA) IFP (A) 10 Allowable forward current 80 IFP (A) Pulse forward current 1 10 10 2 100 1 Pulse forward current 60 1 40 10 -1 10 -1 20 0 - 25 0 20 40 60 80 100 10 -2 10 -1 10 -2 0 1 2 3 4 5 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) PO -- IF 10 3 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 1.6 VF -- Ta 10 PO -- Ta IF = 100mA Relative radiant power PO VF (V) 10 2 (1) 10 1.2 10mA 1mA 0.8 Relative radiant power PO IF = 100mA Forward voltage 1 1 (2) 0.4 10 -1 10 -2 10 -3 10 -2 10 -1 1 10 0 - 40 0 40 80 120 10 -1 - 40 0 40 80 Forward current IF (A) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 960 IF = 100mA 100 Spectral characteristics IF = 100mA Ta = 25C Directivity characteristics 0 100 80 60 40 10 20 30 40 Peak emission wavelength P (nm) Relative radiant intensity(%) Relative radiant intensity (%) 940 80 50 60 70 80 90 920 60 20 900 40 100 110 120 880 20 860 - 40 0 40 80 120 0 780 820 860 900 940 980 1020 Ambient temperature Ta (C ) Wavelength (nm) 2 |
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